Structures and methods to enhance copper metallization

ABSTRACT

Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a metallization layer. The insulator includes a polymer or an insulating oxide compound. And, the inhibiting layer has a compound formed from a reaction between the polymer or insulating oxide compound and a transition metal, a representative metal, or a metalloid.

This application is a Divisional of U.S. application Ser. No.09/483,869, filed Jan. 18, 2000, now U.S. Pat. No. 6,420,262, which isincorporated herein by reference.

RELATED APPLICATIONS

This application is related to the following commonly assignedapplications: U.S. Ser. No. 09/483,881 filed Jan. 18, 2000; U.S. Ser.No. 09/484,002 filed Jan. 18, 2000, now U.S. Pat. No. 6,376,370; U.S.Ser. No. 09/488,098 filed Jan. 18, 2000, now U.S. Pat. No. 6,429,120;U.S. Ser. No. 09/484,303 filed Jan. 18, 2000, all of which areincorporated herein by reference.

TECHNICAL FIELD

The technical field relates generally to semiconductor structures. Moreparticularly, it pertains to metallization layers in semiconductorstructures.

BACKGROUND

One of the main issues confronting the semiconductor processing industryis that of the capacitive-resistance problem in metallization layers. Anindustry-wide effort has undertaken to address the problem. Since thebeginning, the semiconductor processing industry has relied on aluminumand aluminum alloys to serve as metallization layers. Silicon dioxidewas selected as the insulator of choice although polyimide, a polymer,was used in a number of products by IBM for a number of years. With eachsucceeding generation of technology, the capacitive-resistance problemgrows. Because each generation requires that the dimensions of thesemiconductor structure be reduced, the minimum line-space combinationmust also decrease. As the line-space combination decreases, thecapacitance and resistance of the semiconductor structure increases.Thus, these increases contribute to the problem.

Copper metallurgy has been proposed as a substitute for aluminummetallurgy as a material for the metallization layers since copperexhibits greater conductivity than aluminum. Yet several problems havebeen encountered in the development of copper metallurgy. The main issueis the fast diffusion of copper through an insulator, such as silicondioxide, to form an undesired copper oxide compound. Another issue isthe known junction-poisoning effect of copper. These issues have led tothe development of a liner to separate the copper metallization layerfrom the insulator. The use of titanium nitride as a liner was proposedby C. Marcadal et al., “OMCVD Copper Process for Dual DamasceneMetallization,” VMIC Conference Proceedings, p. 93-7 (1997). The use oftantalum nitride as a liner was proposed by Peijun Ding et al., “CopperBarrier, Seed Layer and Planarization Technologies,” VMIC ConferenceProceedings, p. 87-92 (1997). The use of titanium as a liner wasproposed by F. Braud et al., “Ultra Thin Diffusion Barriers for CuInterconnections at the Gigabit Generation and Beyond,” VMIC ConferenceProceedings, p. 174-9 (1996). The use of tungsten silicon nitride as aliner was proposed by T. Iijima et al., “Microstructure and ElectricalProperties of Amorphous W—Si—N Barrier Layer for Cu Interconnections,”VMIC Conference Proceedings, p. 168-73 (1996). The use of zirconium,hafnium, or titanium as a liner was proposed by Anonymous, “ImprovedMetallurgy for Wiring Very Large Scale Integrated Circuits,”International Technology Disclosures, v. 4 no. 9, (Sep. 25, 1996). Theuse of titanium as a liner was proposed by T. Laursen, “Encapsulation ofCopper by Nitridation of Cu—Ti Alloy/Bilayer Structures,” InternationalConference on Metallurgical Coatings and Thin Films in San Diego,Calif., paper H1.03 p. 309 (1997). The use of tantalum, tungsten,tantalum nitride, or trisilicon tetranitride as a liner is currentlyfavored by the industry. See Changsup Ryu et al., “Barriers for CopperInterconnections,” Solid State Technology, p. 53-5 (1999).

Yet another solution to the problem of fast diffusion of copper throughan insulator was proposed by researchers at Rensselaer PolytechnicInstitute (hereinafter, RPI). See S. P. Muraka et al., “CopperInterconnection Schemes: Elimination of the Need of DiffusionBarrier/Adhesion Promoter by the Use of Corrosion Resistant, LowResistivity Doped Copper,” SPIE, v. 2335, p. 80-90 (1994) (hereinafter,Muraka); see also Tarek Suwwan de Felipe et al., “Electrical Stabilityand Microstructural Evolution in Thin Films of High Conductivity CopperAlloys,” Proceedings of the 1999 International Interconnect TechnologyConference, p. 293-5 (1999). These researchers proposed to alloy copperwith a secondary element, which is either aluminum or magnesium. Intheir experiments, they used copper alloys with at least 0.5 atomicpercent aluminum or 2 atomic percent magnesium. When the copper alloy isbrought near the insulator, silicon dioxide, the secondary element andsilicon dioxide form dialuminum trioxide or magnesium oxide. The formeddialuminum trioxide or magnesium oxide acts as a barrier to the fastdiffusion of copper into the silicon dioxide.

Along the same technique as proposed by RPI, Harper et al. discuss inU.S. Pat. No. 5,130,274 (hereinafter, IBM) the use of a copper alloycontaining either aluminum or chromium as the secondary element. Asabove, the secondary element with the insulator, such as silicon dioxideor polyimide, forms a barrier to the fast diffusion of copper.

Semiconductor products with some of the discussed solutions to the fastdiffusion of copper have begun to ship, on a limited basis, and yet theproblem of reducing the resistivity in ever smaller line dimensions isstill present. It has been shown by Panos C. Andricacos, “Copper On-ChipInterconnections,” The Electrochemical Society Interface, pg. 32-7(Spring 1999) (hereinafter Andricacos), that the effective resistivityobtainable by the use of barrier layers was approximately 2microhm-centimeters with a line width greater than 0.3 micrometer. Theeffective resistivity undesirably increases for lines narrower thanthat. The alloy approach investigated by RPI had similar resistivityvalues as found by Andricacos. RPI also found that the use of 0.5 atomicpercent aluminum, in the copper, was apparently insufficient to givecomplete protection from copper diffusion into the silicon dioxidealthough a significant reduction in the rate of copper penetrationthrough the silicon dioxide was achieved. It should be noted that themaximum solubility of aluminum in copper is 9.2 weight percent orapproximately 18 atomic percent whereas the maximum solubility ofmagnesium in copper is 0.61 weight percent or approximately 0.3 atomicpercent. Thus, the alloys used by RPI were saturated with magnesium butfar below the saturation limit when aluminum was used as the secondaryelement in the alloy.

Other researchers have focused on the capacitive effect. The capacitiveeffect has been studied with respect to polymers, such as polyimide,which are used to substitute for silicon dioxide as insulation insemiconductor structures. Some of these polymers have dielectricconstants that are considerably lower than silicon dioxide, and apresumption can be made that the use of these polymers should lessen theundesired capacitive effect. Yet, when one of these polymers is cured toform an insulator near the vicinity of the copper metallization layer,the polymer reacts with the copper metallization layer to form copperdioxide, a conductive material. See D. J. Godbey et al., “CopperDifflusion in Organic Polymer Resists and Inter-Level Dielectrics,” ThinSolid Films, v. 308-9, p. 470-4 (1970) (hereinafter, Godbey). Thisconductive material is dispersed within the polymer thereby effectivelyraising the dielectric constant of the polymer and in many cases evenincreasing its conductivity. Hence, the undesired capacitive effectcontinues even with the use of lower dielectric polymer materials.

Andricacos points out that the use of copper along with cladding offersa significant improvement in conductivity over thetitanium/aluminum-copper alloy/titanium sandwich structure now inwidespread use throughout the industry. Andricacos also noted that asthe line width decreases even a thin liner would undesirably effect theline resistance. The proposals by RPI and IBM attempt to address thisproblem by forming the liner using a copper alloy. The liner formedusing a copper alloy displaces a portion of an area that was occupied bythe insulator.

However, in solving one problem, RPI and IBM introduce another problem.The copper alloys used by RPI and IBM essentially lack the desirableproperties of copper that initially drove the industry to use it. As waspointed out by RPI, the use of an alloy containing aluminum, even at aconcentration so low as to not be completely effective in preventing thediffusion of copper, shows a measurable increase in resistance. IBM usedonly one layer of the alloy. Yet, that one layer has a highconcentration of aluminum and will undoubtedly have an undesired effecton the resistivity.

As the minimum dimensions shrink, the use of even a twenty-Angstromlayer of an alloy with higher resistivity will have a significant effecton the total resistivity of the conductor composite. For example, a200-Angstrom film on both sides of a 0.1 micron trench is 40 percent ofthe total trench width. Therefore, at the same time that the dimensionsof the metallization layer decrease, the specific resistivityundesirably increases.

It has also been shown that there is a significant difference betweenthe amount of the undesired copper oxide compound that is formed when apolyimide insulator is used if the acidity of the polymer solution islow. This is the case if the precursor used in the formation of thepolyimide is an ester instead of acid. In the case of PI-2701, which isa photosensitive polyimide that starts from an ester precursor, theamount of oxide formed is reduced by a factor of approximately four ascompared to films with a similar final chemistry. See Godbey. It isthought that the slight acidity of PI-2701 may come from the photo-pacor the process used to form it. The films in the study by Godbey wereall prepared by curing the liquid precursor in air or in anapproximately inert environment. It is also well known that copper oxidewill not form in and can be reduced by a high purity hydrogenatmosphere.

Muraka opines that the use of titanium as a barrier layer was found toincrease the resistivity of the copper film significantly whenheat-treated at temperatures of 350 degrees Celsius or above. If theheat-treatment was carried out in hydrogen, no increase in resistivitywas reported. As this temperature is above the eutectoid temperature ofthe titanium-hydrogen system, the formation of titanium hydride isassumed to have occurred. Muraka also asserts that a similar increase inresistivity is seen with zirconium and hafnium containing copper alloys,yet Muraka provides no data to support the assertion.

Other research results weaken the conclusion of Muraka. See Saarivirta1; see also U.S. Pat. No. 2,842,438 to Matti J. Saarivirta and Alfred E.Beck (Jul. 8, 1958). If one looks at the equilibrium phase diagrams ofthe copper-titanium and copper-zirconium systems, it can be seen thatthe solubility of zirconium in copper is more than ten times less thanthat of titanium. See Metals Handbook, v. 8, p. 300-2 (8^(th) Ed.). Itshould also be noted that a series of copper-zirconium alloys have beendisclosed that have quite good electrical conductivity.

It has been shown that alloys containing more than about 0.01 weightpercent zirconium have a significant loss of conductivity in the as-caststate. See Matti J. Saarivirta, “High Conductivity Copper-Rich Cu—ZrAlloys,” Trans. of The Metallurgical Soc. of AIME, v. 218, p. 431-7(1960) (hereinafter, Saarivirta 1). It has also been shown that theconductivity of even a 0.23 weight percent zirconium alloy is restoredto above 90 percent of IACS when the alloy, in the cold drawn state, isheat-treated above 500 degrees Celsius for one hour. This shows that asignificant amount of the zirconium, which was in solid solution in theas-cast state, has precipitated as pentacopper zirconium. From thisdata, it can be seen that if the zirconium content in the copper is keptlow the conductivity of the resulting metallurgy can be above 95 percentof IACS. If it is desired to deposit a zirconium layer on top of acopper layer the temperature of deposition of the zirconium should bekept below 450 degrees Celsius, such as between 250 degrees Celsius and350 degrees Celsius. Such deposition may occur in a single damasceneprocess or at the bottom of vias in a dual-damascene process. The term“vias” means the inclusion of contact holes and contact plugs. When thedeposition temperature is kept in this range, a thin layer ofpentacopper zirconium tends to form initially thus inhibiting thediffusion of zirconium into the copper. While even at 450 degreesCelsius the solubility is low enough to give very good conductivity, andalthough zirconium and titanium have many properties that are verysimilar, their solubility in copper differs by more than a factor often. Therefore, the use of zirconium is much preferred over titanium forthis application.

What has been shown is the need of the semiconductor processing industryto address the issue of interconnecting devices in integrated circuitsas these circuits get smaller with each generation. Although aluminumwas initially used as the metal for interconnecting, copper has emergedas a metal of choice. However, because of the fast diffusion of copperinto the semiconductor insulator, the capacitive-resistive problembecomes an important issue that must be addressed. One solution is touse a liner, but with the reduction in the geometry of the circuits, thedimensions of the liner become inadequate to prevent the fast diffusionof copper. Another solution is to form a barrier material from theinsulator and a copper alloy; this solution seems promising at first,but because the copper is alloyed, the desirable conductivity propertyof copper is diminished.

Thus, what is needed are structures and methods to inhibit the fastdiffusion of copper so as to enhance the copper metallization layer in asemiconductor structure.

SUMMARY

The above-mentioned problems with copper metallization layer as well asother problems are addressed by the present invention and will beunderstood by reading and studying the following specification. Systems,devices, structures, and methods are described which accord thesebenefits.

An illustrative embodiment includes a method for preparing a copperwiring system for ultra-large-scale integrated circuits. This copperwiring system has a high conductivity and low capacitive loading.

Another illustrative embodiment includes a method for constructing aninsulator, such as an oxide compound or a polymer structure. Theinsulator is made impervious to the copper, which is not alloyed.Because the copper is not alloyed, the copper can have as low aresistivity as possible depending on the method of deposition and theresulting microstructure.

Another illustrative embodiment includes a method for forming anenhanced metallization layer. The method comprises forming an insulatorlayer having a first substance. The first substance comprises a materialselected from a group consisting of a polymer, a foamed polymer, afluorinated polymer, a fluorinated-foamed polymer, and an oxidecompound. The method further comprises forming an inhibiting layer onthe insulator layer. The forming of the inhibiting layer includesdepositing a second substance on the insulator layer using a techniqueselected from a group consisting of low-energy implantation and chemicalvapor deposition. The second substance is selected from a groupconsisting of a transition metal, a representative metal, and ametalloid. The process of forming the inhibiting layer includes reactingthe first substance and the second substance to form a compound so as toinhibit undesired atomic migration. The method further comprises forminga copper metallization layer on the inhibiting layer.

Another illustrative embodiment includes a semiconductor structure. Thestructure comprises an insulator layer having a first substance. Thefirst substance is selected from a group consisting of a polymer, afoamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, anaerogel, and an insulator oxide compound. The polymer includespolyimide. The insulator oxide compound includes silicon dioxide. Thesemiconductor structure includes an inhibiting layer on the insulatorlayer. The inhibiting layer comprises a compound formed from a reactionthat includes the first substance and a second substance. The secondsubstance is selected from a group consisting of a transition metal, arepresentative metal, and a metalloid. The transition is selected from agroup consisting of chromium, molybdenum, tungsten, titanium, zirconium,hafnium, vanadium, niobium, and tantalum. The representative metal isselected from a group consisting of aluminum and magnesium. Themetalloid includes boron. The semiconductor structure also includes acopper metallization layer on the inhibiting layer.

These and other embodiments, aspects, advantages, and features of thepresent invention will be set forth in part in the description whichfollows, and in part will become apparent to those skilled in the art byreference to the following description of the invention and referenceddrawings or by practice of the invention. The aspects, advantages, andfeatures of the invention are realized and attained by means of theinstrumentalities, procedures, and combinations particularly pointed outin the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor structure accordingto one embodiment of the present invention.

FIGS. 2A-2F are cross-sectional views of a semiconductor structureduring processing according to one embodiment of the present invention.

FIGS. 3A-3C are closed-up cross-sectional views of a semiconductorstructure during processing according to one embodiment of the presentinvention.

FIG. 4 is a block diagram of a device according to one embodiment of thepresent invention.

FIG. 5 is an elevation view of a semiconductor wafer according to oneembodiment of the present invention.

FIG. 6 is a block diagram of a circuit module according to oneembodiment of the present invention.

FIG. 7 is a block diagram of a memory module according to one embodimentof the present invention.

FIG. 8 is a block diagram of a system according to one embodiment of thepresent invention.

FIG. 9 is a block diagram of a system according to one embodiment of thepresent invention.

FIG. 10 is a block diagram of a system according to one embodiment ofthe present invention.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings which form a part hereof, and in whichis shown, by way of illustration, specific embodiments in which theinvention may be practiced. In the drawings, like numerals describesubstantially similar components throughout the several views. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the invention. Other embodiments may be utilizedand structural, logical, and electrical changes may be made withoutdeparting from the scope of the present invention.

The terms wafer and substrate used in the following description includeany base semiconductor structure. Both are to be understood as includingsilicon-on-sapphire (SOS) technology, silicon-on-insulator (SOI)technology, thin film transistor (TFT) technology, doped and undopedsemiconductors, epitaxial layers of silicon supported by a basesemiconductor structure, as well as other semiconductor structures wellknown to one skilled in the art. Furthermore, when reference is made toa wafer or substrate in the following description, previous processsteps may have been utilized to form regions/junctions in the basesemiconductor structure and layer formed above, and the terms wafer orsubstrate include the underlying layers containing suchregions/junctions and layers that may have been formed above. Thefollowing detailed description is, therefore, not to be taken in alimiting sense, and the scope of the present invention is defined onlyby the appended claims.

The embodiments described herein focus on the formation of an inhibitinglayer interposed between an insulator and a copper metallization layer,which is not alloyed, so as to inhibit the undesired diffusion of copperinto the insulator.

FIG. 1 is a cross-sectional view of a semiconductor structure accordingto one embodiment of the present invention. Semiconductor structure 100includes a substrate 199, and a number of semiconductor devicestructures, such as devices 101A and 101B. Devices 101A and 101B includeactive devices, such as transistors, and passive devices, such ascapacitors, or a combination of active and passive devices. Thesemiconductor structure 100 optionally includes a protective layer 102.In one embodiment, the protective layer 102 includes silicon nitride,such as trisilicon tetranitride. The purpose of the protective layer 102includes acting as a protective layer to prevent the metallization layerfrom contacting the devices 101A and 101B. The semiconductor structure100 includes a number of contacts 107. The contacts 107 provideelectrical connection to the devices 101A and 101B. In one embodiment,the contacts 107 include a diffusion barrier, such as titanium silicidelayers 106A and 106B, and a plug, such as tungsten layers 107A and 107B.

The semiconductor structure 100 includes an insulator layer 108. In oneembodiment, the insulator layer 108 includes a substance that comprisesa material selected from a group consisting of a polymer, a foamedpolymer, a fluorinated polymer, a fluorinated-foamed polymer, anaerogel, and an insulator oxide compound. The polymer includespolyimide. The insulator oxide compound includes silicon dioxide. Thesemiconductor structure includes a copper seed layer 116 and a copperconductor layer 120. The copper seed layer 116 and the copper conductorlayer 120 constitute a portion of a copper metallization layer 197.

The semiconductor structure 100 includes an inhibiting layer 114.Without this inhibiting layer 114, the copper atoms of the coppermetallization layer 197 may diffuse into the insulator 108. Thisdiffusion changes the microstructure of a portion of the semiconductorstructure 100 and causes undesired capacitive-resistive effects. Thepresence of the inhibiting layer 114 inhibits the capacitive-resistiveeffects. One of the advantages of the inhibiting layer 114 over a lineris that the inhibiting layer 114 scales with the geometry of thesemiconductor structure for each succeeding generation of technology.Another advantage of the inhibiting layer 114 over a formation of abarrier from a copper alloy is that the inhibiting layer 114 need not becomprised from a material that is from the copper conductor layer 120.This leaves the copper conductor layer 120 to be completely occupied bycopper so as to enhance the electrical properties of the metallizationlayer 197 of the semiconductor structure 100.

In one embodiment, the inhibiting layer 114 comprises a compound formedfrom a reaction that includes the substance in the insulator 108 and asecond substance. The second substance is selected from a groupconsisting of a transition metal, a representative metal, and ametalloid. The transition metal is selected from a group consisting ofchromium, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium,niobium, and tantalum. The representative metal includes elements fromthe alkaline earth metal. The representative metal includes aluminum andmagnesium. The metalloid includes boron.

FIGS. 2A-2F are cross-sectional views of a semiconductor structureduring processing according to one embodiment of the present invention.FIG. 2A illustrates a portion of a semiconductor structure 200, such asan integrated circuit having a number of semiconductor devices, such asdevices 201A and 201B. The formation of semiconductor devices, such asdevices 201A and 201B, does not limit the embodiments of the presentinvention, and as such, will not be presented here in full. The devices201A and 201B include active devices, such as transistors, and passivedevices, such as capacitors, or a combination of active and passivedevices.

The semiconductor structure 200 optionally includes a protective layer202. The protective layer 202 is deposited over the substrate 299 anddevices 201A and 201B. The deposition of the protective layer 202includes depositing a layer of a substance that protects the devices201A and 201B from subsequent conductive semiconductor layers. In oneembodiment, this substance includes a nitride compound, such as siliconnitride. Silicon nitride includes a substance such as trisilicontetranitride (Si₃N₄). In another embodiment, this layer of siliconnitride is deposited to a thickness in the range of about 100 to about500 Angstroms.

The semiconductor structure 200 includes a first insulator layer 208.The first insulator layer 208 is deposited over the protective layer 202although in one embodiment, the first insulator layer 208 may be formedbefore the formation of the protective layer 202. In one embodiment, thefirst insulator layer 208 abuts the protective layer 202 afterdeposition. In one embodiment, the first insulator layer 208 includes afirst substance that is selected from a group consisting of an organicsubstance and an inorganic substance.

In one embodiment, the first substance of the first insulator layer 208includes an organic substance that includes a material having aplurality of single-hydrocarbon molecules bonded together. In anotherembodiment, the material comprises at least two mers bonded togetherthat have been treated so as to have a low dielectric constant. Inanother embodiment, the material is selected from a group consisting ofa polymer, a foamed polymer, a fluorinated polymer, and afluorinated-foamed polymer. Since a polymer includes polyimide, thematerial can be selected from a group consisting of a polyimide, afoamed polyimide, a fluorinated polyimide, and a fluorinated-foamedpolyimide. In another embodiment, the material can be selected from agroup consisting of DuPont PI-2801 material, a foamed DuPont PI-2801material, a fluorinated DuPont PI-2801 material, and afluorinated-foamed DuPont PI-2801 material. The material may be foamed,for example, as described in U.S. Ser. No. 08/892,114, filed Jul. 14,1997, entitled “Method of Forming Insulating Material for an IntegratedCircuit and Integrated Circuits Resulting From Same,” which is herebyincorporated by reference. In the embodiment that the material is apolyimide, the first insulator layer 208 is cured after deposition,forming a layer with a thickness of about 5000 Angstroms after curing.The method of curing the first insulator layer 208 does not limit theembodiments of the present invention, and as such, will not be presentedhere in full.

In another embodiment, the first substance of the first insulator layer208 includes an inorganic substance that includes a material selectedfrom a group consisting of an aerogel and an insulator oxide compound.The insulator oxide compound includes silicon dioxide.

The hereinbefore and hereinafter discussions are illustrative of oneexample of a portion of a fabrication process to be used in conjunctionwith the various embodiments of the invention. Other methods offabrication are also included within the scope of the embodiments of thepresent invention. For clarity purposes, many of the reference numbersare eliminated from subsequent drawings so as to focus on the portion ofinterest of the semiconductor structure 200.

FIG. 2B shows the semiconductor structure following the next sequence ofprocessing. Vias 205A and 205B are opened to devices 201A and 201B usinga photolithography technique. The term “vias” means the inclusion ofcontact holes and contact plugs. A suitable photolithography techniqueand an etching process can be chosen without limiting the embodiments ofthe present invention, and as such, it will not be presented here infull. In one embodiment, a first contact material, such as titaniumsilicide layers 206A and 206B, is placed in the vias 205A and 205B,through a process such as chemical vapor deposition (CVD). Next, asecond contact material, such as tungsten plugs 206A and 206B, can bedeposited in the vias 205A and 205B. The tungsten plugs 206A and 206Bcan be deposited in the vias 205A and 205B using any suitable techniquesuch as a CVD process. The excess titanium silicide or tungsten can beremoved from the wafer surface by chemical mechanical planarization(CMP) or other suitable processes to form a planarized surface.

The first insulator layer 208 is patterned to define a number oftrenches, such as trench 210. The term “trench” means the inclusion oflines for electrically interconnecting devices in a semiconductorstructure. In one embodiment, the first insulator layer 208 has a firstpredetermined thickness and the trench 210 has a second predeterminedthickness such that the second predetermined thickness of the trench 210is proportional to the first predetermined thickness of the firstinsulator layer 208. The trench 210 is located in the first insulatorlayer 208 so as to open up the semiconductor structure 200 to a numberof first level vias, such as vias 205A and 205B. In other words, a firstlevel copper metallization layer pattern 210 is defined in a mask layerof photoresist 212. Then, the first insulator layer 208 is etched, usingany suitable process, such as reactive ion etching (RIE), such that thefirst level copper metallization layer pattern 210 is defined in thefirst insulator layer 208. In one embodiment, a residual photoresistlayer 212 is left in place on the first insulator layer 108 in a numberof regions 213 outside of the number trenches 210.

In one embodiment, the formation of vias 205A and 205B and the trench210 is made using a damascene technique, such as the dual or tripledamascene process. The structure is now as it appears in FIG. 2B.

FIG. 2C shows the semiconductor structure following the next sequence ofprocessing. An inhibiting layer 214 is formed in the trench 210. In oneembodiment, the forming of the inhibiting layer 214 includes depositinga second substance using a technique selected from a group consisting oflow-energy implantation and chemical-vapor deposition. The secondsubstance is selected from a group consisting of a transition metal, arepresentative metal, and a metalloid. In addition to depositing thesecond substance, the forming of the inhibiting layer 214 includesreacting the first substance of the insulator layer 208 and the secondsubstance to form a compound so as to inhibit undesired atomicmigration. In one embodiment, the reacting process includes reacting toform an in situ barrier. In another embodiment, the reacting processincludes an annealing process. In yet another embodiment, the reactingprocess is accomplished prior to the completion of the semiconductorstructure 200.

In the embodiment that the second substance is a transition metal, thesecond substance is selected from a group consisting of chromium,molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, niobium,and tantalum. In the embodiment that the second substance is arepresentative metal, the second substance includes an alkaline earthmetal. In another embodiment, in which the second substance is arepresentative metal, the second substance includes aluminum andmagnesium. In the embodiment in which the second substance is ametalloid, the second substance includes boron. In the embodiment inwhich the second substance is either zirconium, aluminum, or an alkalineearth metal, the second substance is deposited with a thickness of about5 Angstroms to about 40 Angstroms. In the embodiment in which the secondsubstance is an alkaline earth metal, the second substance includesmagnesium.

In various embodiments, the depositing process of forming the inhibitinglayer 214 includes implanting the second substance using a low-energyimplantation technique with an implantation energy of about 100electron-volts to about 2000 electron-volts. In various embodiments, thedepositing process of forming the inhibiting layer 214 includesdepositing in a temperature of about 250 degrees Celsius to about 375degrees Celsius. In another embodiment, the temperature includes 325degrees Celsius.

In various embodiments, the second substance is deposited into thesurfaces of the trench 210 using a depositing technique where the angleof deposition 211 is varied about 3 degrees to about 15 degrees fromnormal with respect to the surface of the wafer. In other words, theangle is varied from normal with respect to the planarized surface. Invarious embodiments, the angle of implantation 211 is dependent on theheight-to-width ratio of the semiconductor structure.

In one embodiment, the first insulator layer 208 includes the firstsubstance selected from a polyimide or a foamed polyimide, the secondsubstance is selected from zirconium, and the depositing of the secondsubstance is a low-energy implantation technique. Zirconium is implantedusing a dose of about 5×10¹⁶ ions per square centimeter. Theimplantation energy used is about 400 electron-volts to about 600electron-volts. The angle of implantation 211 varies from about 5degrees to about 10 degrees from normal with respect to the firstinsulator layer 208. In one embodiment, zirconium is deposited with athickness of about 5 Angstroms to about 40 Angstroms. In anotherembodiment, zirconium is deposited with a thickness of about 10Angstroms to about 30 Angstroms. In another embodiment, zirconium isdeposited with a thickness of about 20 Angstroms. In this embodiment,the reacting process of forming the compound of the inhibiting layerincludes reacting at a temperature of about 325 degrees Celsius to about375 degrees Celsius. In one embodiment, the time for the reactingprocess is from about 27 minutes to about 33 minutes. In one embodiment,the duration of the reacting process is 30 minutes.

In one embodiment, the first insulator layer 208 includes the firstsubstance being selected from an insulator oxide compound, the secondsubstance being selected from aluminum, and the depositing of the secondsubstance being executed by a low-energy implantation technique.Aluminum is implanted using a dose of about 5×10¹⁶ ions per squarecentimeter. The implantation energy used is about 400 electron-volts.The angle of implantation 211 varies from about 5 degrees to about 10degrees from normal with respect to the first insulator layer 208. Inone embodiment, aluminum is deposited with a thickness of about 5Angstroms to about 40 Angstroms. In another embodiment, aluminum isdeposited with a thickness of about 10 Angstroms to about 30 Angstroms.In another embodiment, aluminum is deposited with a thickness of about20 Angstroms. In this embodiment, the reacting process of forming thecompound of the inhibiting layer 214 includes reacting at a temperatureof about 325 degrees Celsius to about 375 degrees Celsius. In oneembodiment, the duration for the reacting process is from about 27minutes to about 33 minutes. In one embodiment, the duration of thereacting process is 30 minutes.

FIG. 2D shows the semiconductor structure following the next sequence ofprocessing. A first seed layer 216 is deposited on the inhibiting layer214 using a low-energy ion implantation. In one embodiment, depositingthe seed layer 216 on the inhibiting layer 214 includes depositing acopper seed layer 216. In one embodiment, depositing the seed layer 216includes depositing copper seed layer 216 having a thickness of about100 Angstroms. This can be achieved using an 8×10¹⁶ ion implantation ofcopper. In one embodiment, the energy of implantation includes about 100electron-volts. Additionally, the copper seed layer 216 is implanted atan angle 215 normal to the planarized surface. Implanting the copperseed layer 216 at an angle normal to the planarized surface would resultin the copper seed layer 216 being parallel to a bottom surface 218 inthe trench 210. The copper seed layer 216 is deposited to a much lesserextent on the side surfaces 217 of the trench 210.

FIG. 2E shows the semiconductor structure following the next sequence ofprocessing. Returning briefly to FIG. 2D, the residual photoresist layer212 has served as a blocking layer to define the implant areas for theinhibiting layer 214, and the copper seed layer 216. In one embodiment,the residual photoresist layer 212 is removed using a wet-strip process.In another embodiment, the residual photoresist layer 212 is removedusing a tape lift-off technique. In yet another embodiment, the residualphotoresist layer 212 is removed using a tape lift-off technique incombination with a wet-strip process. The tape lift-off technique In oneembodiment, removing the residual photoresist layer 212 includesremoving the unwanted copper seed layer 216, and the unwanted inhibitinglayer 214 from a portion of the surface of the wafer. Such a portion ofthe surface of the wafer may include a number of regions outside of thetrench 210 near the vicinity of the top surface 219. The semiconductorstructure will now appear as shown in FIG. 2E.

FIG. 2F shows the semiconductor structure following the next sequence ofprocessing. The semiconductor structure 200 includes a coppermetallization layer 220. The copper metallization layer 220 isselectively formed on the copper seed layer 216 in the trench 210. Thecopper metallization layer 220 includes copper as an element in itscomposition. In one embodiment, the copper metallization layer 220 isdeposited using a selective CVD process. In another embodiment,depositing the metallization layer 220 includes depositing a coppermetallization layer 220 using electroplating or electroless plating.

In the embodiment in which the second substance is zirconium, thesemiconductor structure 200 is heat-treated at about 250 degrees Celsiusto about 350 degrees Celsius from about one to about two hours after theelectroplating of the copper.

The embodiments as described above in FIGS. 2A to FIG. 2F may beiterated to form any number of subsequent copper metallization layers ina multi-layer wiring structure. The term “wiring structure” means theinclusion of a contacting and interconnecting structure in an integratedcircuit so as to electrically connect various devices together. The term“wiring structure” means the inclusion of at least one coppermetallization layer.

FIGS. 3A-3C are closed-up cross-sectional views of a semiconductorstructure during processing according to one embodiment of the presentinvention. FIG. 3A shows a closed-up cross-sectional view of asemiconductor structure 300 during processing. Semiconductor structure300 includes elements that are similar to elements discussed in FIGS.2A-2F. The discussion of those elements that are similar and have anidentical last-two digit nomenclature is incorporated here in full.

FIG. 3A includes a trench 310 that is defined by the current shape ofprotective layer 302, an insulator 308, and vias 305A and 305B. Theinsulator 308 includes a first substance. The trench 310 has beendefined to begin the formation of a copper metallization layer. Insubsequent processing steps, the trench 310 may be filled with copper tocomplete the formation of a copper metallization layer. As discussedhereinbefore, the formation of a copper metallization layer into thetrench 310, without the various embodiments of the present invention,may cause the undesired diffusion of copper atoms into the insulator308.

FIG. 3B shows the next sequence of processing. A layer of a secondsubstance is deposited abutting the insulator layer 308 and the vias305A and 305B. The second substance occupies a portion of the trench310.

FIG. 3C shows the next sequence of processing. An inhibiting layer 314is formed from the first substance of the insulator 308 and the secondsubstance 398. This inhibiting layer 314 helps to enhance the coppermetallization layer. In one embodiment, because the inhibiting layer 314forms an integral part of the insulator 308, the inhibiting layer 314 iseffective in inhibiting the diffusion of the copper metallization layer.In another embodiment, because the inhibiting layer 314 forms anintegral part of the semiconductor structure 300, it scales with eachsucceeding generation of semiconductor processing technology so as tomaintain an effective inhibiting layer against the capacitive-resistiveeffects. In another embodiment, because the inhibiting layer 314occupies a portion of the space of the insulator 308 but not the spaceof the trench 310, more of the space of the trench 310 can be used forthe deposition of copper. Thus, the metallization layer of the describedembodiments is enhanced.

FIG. 4 is a block diagram of a device according to one embodiment of thepresent invention. The memory device 400 includes an array of memorycells 402, address decoder 404, row access circuitry 406, column accesscircuitry 408, control circuitry 410, and input/output circuit 412. Thememory device 400 can be coupled to an external microprocessor 414, ormemory controller for memory accessing. The memory device 400 receivescontrol signals from the processor 414, such as WE*, RAS* and CAS*signals. The memory device 400 is used to store data which is accessedvia I/O lines. It will be appreciated by those skilled in the art thatadditional circuitry and control signals can be provided, and that thememory device 400 has been simplified to help focus on the invention. Atleast one of the memory cells has an inhibiting layer in accordance withthe aforementioned embodiments. In one embodiment, at least one of thememory cells has a capacitor and at least one transistor that areinterconnected through a semiconductor structure in accordance with theaforementioned embodiments.

It will be understood that the above description of a DRAM (DynamicRandom Access Memory) is intended to provide a general understanding ofthe memory and is not a complete description of all the elements andfeatures of a DRAM. Further, the invention is equally applicable to anysize and type of memory circuit and is not intended to be limited to theDRAM described above. Other alternative types of devices include SRAM(Static Random Access Memory) or Flash memories. Additionally, the DRAMcould be a synchronous DRAM commonly referred to as SGRAM (SynchronousGraphics Random Access Memory), SDRAM (Synchronous Dynamic Random AccessMemory), SDRAM II, and DDR SDRAM (Double Data Rate SDRAM), as well asSynchlink or Rambus DRAMs and other emerging memory technologies.

As recognized by those skilled in the art, memory devices of the typedescribed herein are generally fabricated as an integrated circuitcontaining a variety of semiconductor devices. The integrated circuit issupported by a substrate. Integrated circuits are typically repeatedmultiple times on each substrate. The substrate is further processed toseparate the integrated circuits into dies as is well known in the art.

FIG. 5 is an elevation view of a semiconductor wafer according to oneembodiment of the present invention. In one embodiment, a semiconductordie 510 is produced from a wafer 500. A die is an individual pattern,typically rectangular, on a substrate that contains circuitry, orintegrated circuit devices, to perform a specific function. At least oneof the integrated circuit devices includes a memory cell as discussed inthe various embodiments heretofore in accordance with the invention. Asemiconductor wafer will typically contain a repeated pattern of suchdies containing the same functionality. Die 510 may contain circuitryfor the inventive memory device, as discussed above. Die 510 may furthercontain additional circuitry to extend to such complex devices as amonolithic processor with multiple functionality. Die 510 is typicallypackaged in a protective casing (not shown) with leads extendingtherefrom (not shown) providing access to the circuitry of the die forunilateral or bilateral communication and control. In one embodiment, atleast two of the integrated circuit devices are interconnected through asemiconductor structure as discussed in the aforementioned embodiments.

FIG. 6 is a block diagram of a circuit module according to oneembodiment of the present invention. Two or more dies 610 may becombined, with or without protective casing, into a circuit module 600to enhance or extend the functionality of an individual die 610. Circuitmodule 600 may be a combination of dies 610 representing a variety offunctions, or a combination of dies 610 containing the samefunctionality. One or more dies 610 of circuit module 600 contain atleast one of the semiconductor structure to enhance a coppermetallization layer in accordance with the aforementioned embodiments ofthe present invention.

Some examples of a circuit module include memory modules, devicedrivers, power modules, communication modems, processor modules, andapplication-specific modules, and may include multilayer, multichipmodules. Circuit module 600 may be a subcomponent of a variety ofelectronic systems, such as a clock, a television, a cell phone, apersonal computer, an automobile, an industrial control system, anaircraft, and others. Circuit module 600 will have a variety of leads612 extending therefrom and coupled to the dies 610 providing unilateralor bilateral communication and control.

FIG. 7 is a block diagram of a memory module according to one embodimentof the present invention. Memory module 700 contains multiple memorydevices 710 contained on support 715, the number depending upon thedesired bus width and the desire for parity. Memory module 700 accepts acommand signal from an external controller (not shown) on a command link720 and provides for data input and data output on data links 730. Thecommand link 720 and data links 730 are connected to leads 740 extendingfrom the support 715. Leads 740 are shown for conceptual purposes andare not limited to the positions as shown. At least one of the memorydevices 710 includes a memory cell as discussed in various embodimentsin accordance with the invention.

FIG. 8 is a block diagram of a system according to one embodiment of thepresent invention. Electronic system 800 contains one or more circuitmodules 802. Electronic system 800 generally contains a user interface804. User interface 804 provides a user of the electronic system 800with some form of control or observation of the results of theelectronic system 800. Some examples of user interface 804 include thekeyboard, pointing device, monitor, or printer of a personal computer;the tuning dial, display, or speakers of a radio; the ignition switch,gauges, or gas pedal of an automobile; and the card reader, keypad,display, or currency dispenser of an automated teller machine. Userinterface 804 may further describe access ports provided to electronicsystem 800. Access ports are used to connect an electronic system to themore tangible user interface components previously exemplified. One ormore of the circuit modules 802 may be a processor providing some formof manipulation, control, or direction of inputs from or outputs to userinterface 804, or of other information either preprogrammed into, orotherwise provided to, electronic system 800. As will be apparent fromthe lists of examples previously given, electronic system 800 will oftencontain certain mechanical components (not shown) in addition to circuitmodules 802 and user interface 804. It will be appreciated that the oneor more circuit modules 802 in electronic system 800 can be replaced bya single integrated circuit. Furthermore, electronic system 800 may be asubcomponent of a larger electronic system. At least one of the circuitmodules 802 includes at least an integrated circuit that comprises atleast two semiconductor devices that are interconnected through asemiconductor structure as discussed in various embodiments inaccordance with the invention.

FIG. 9 is a block diagram of a system according to one embodiment of thepresent invention. Memory system 900 contains one or more memory modules902 and a memory controller 912. Each memory module 902 includes atleast one memory device 910. Memory controller 912 provides and controlsa bidirectional interface between memory system 900 and an externalsystem bus 920. Memory system 900 accepts a command signal from theexternal bus 920 and relays it to the one or more memory modules 902 ona command link 930. Memory system 900 provides for data input and dataoutput between the one or more memory modules 902 and external systembus 920 on data links 940. At least one of the memory devices 910includes a memory cell that includes an inhibiting layer as discussed invarious embodiments in accordance with the invention.

FIG. 10 is a block diagram of a system according to one embodiment ofthe present invention. Computer system 1000 contains a processor 1010and a memory system 1002 housed in a computer unit 1005. The processor1010 may contain at least two semiconductor devices that areinterconnected through a semiconductor structure as describedhereintofore. Computer system 1000 is but one example of an electronicsystem containing another electronic system, e.g., memory system 1002,as a subcomponent. The memory system 1002 may include a memory cell asdiscussed in various embodiments of the present invention. Computersystem 1000 optionally contains user interface components. These userinterface components include a keyboard 1020, a pointing device 1030, amonitor 1040, a printer 1050, and a bulk storage device 1060. It will beappreciated that other components are often associated with computersystem 1000 such as modems, device driver cards, additional storagedevices, etc. It will further be appreciated that the processor 1010 andmemory system 1002 of computer system 1000 can be incorporated on asingle integrated circuit. Such single-package processing units reducethe communication time between the processor and the memory circuit.

CONCLUSION

Structures and methods have been described to address situations where ametallization layer acts with an insulator layer such that acapacitive-resistive effect arises. Such an effect is inhibited by theembodiments of the present invention, and at the same time, themetallization layer is enhanced. As described heretofore, the inhibitinglayer inhibits diffusion between copper and an insulator layer. Such aninhibition layer is formed without the need to use a copper alloy.

Although the specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. This application isintended to cover any adaptations or variations of the presentinvention. It is to be understood that the above description is intendedto be illustrative, and not restrictive. Combinations of the aboveembodiments and other embodiments will be apparent to those of skill inthe art upon reviewing the above description. The scope of the inventionincludes any other applications in which the above structures andfabrication methods are used. Accordingly, the scope of the inventionshould only be determined with reference to the appended claims, alongwith the full scope of equivalents to which such claims are entitled.

1. A semiconductor structure comprising: a protective layer thatcomprises an insulator nitride compound; a first insulator layerabutting the protective layer; at least one contact plug through theprotective layer and the first insulator layer, wherein the contact plugcomprises first and second contact materials, wherein the first contactmaterial includes titanium nitride, and wherein the second contactmaterial includes tungsten; a second insulator layer that comprisespolyimide; an inhibiting layer on the second insulator layer having acompound including zirconium and polyimide; a copper seed layer on theinhibiting layer; and a copper metallization layer electroplated on thecopper seed layer.
 2. The semiconductor structure of claim 1, whereinthe protective layer includes a nitride compound that comprises siliconnitride, wherein silicon nitride includes trisilicon tetranitride. 3.The semiconductor structure of claim 2, wherein the protective layer hasa thickness of about 100 nanometers.
 4. The semiconductor structure ofclaim 1, wherein the protective layer is on the first insulator layer.5. The semiconductor structure of claim 1, wherein the first insulatorlayer is on the protective layer.
 6. The semiconductor structure ofclaim 1, wherein the first insulator layer includes a material selectedfrom a group consisting of a polymer and a foamed polymer, wherein thepolymer comprises a polyimide.
 7. A semiconductor structure comprising:a protective layer that comprises an insulator nitride compound; a firstinsulator layer abutting the protective layer; at least one contact plugthrough the protective layer and the first insulator layer, wherein thecontact plug comprises first and second contact materials, wherein thefirst contact material includes titanium nitride, and wherein the secondcontact material includes tungsten; a second insulator layer, whereinthe second insulator layer includes a substance with a firstpredetermined thickness, and wherein the substance comprises aninsulator oxide compound; an inhibiting layer on the second insulatorlayer and including a compound that comprises aluminum and the insulatoroxide compound; and a copper metallization layer on the inhibitinglayer.
 8. The semiconductor structure of claim 7, wherein the protectivelayer includes a nitride compound that comprises silicon nitride,wherein silicon nitride includes trisilicon tetranitride.
 9. Thesemiconductor structure of claim 8, wherein the protective layer has athickness of about 100 nanometers.
 10. The semiconductor structure ofclaim 7, wherein the protective layer is on the first insulator layer.11. The semiconductor structure of claim 7, wherein the first insulatorlayer is on the protective layer.
 12. The semiconductor structure ofclaim 1, wherein the copper metallization layer does not include acopper alloy.
 13. The semiconductor structure of claim 7, wherein thecopper metallization layer does not include a copper alloy.
 14. Asemiconductor structure comprising: a protective layer; a firstinsulator structure overlying and contacting the protective layer; acopper structure contacting the first insulator structure and overlyinga portion of the protective layer; at least one contact extendingthrough the protective layer and electrically coupled to the copperstructure; a second insulator structure overlying the portion of theprotective layer and comprising a polyimide; and an inhibiting layerbetween the second insulator structure and the copper structure, whereinthe inhibiting layer comprises a compound including zirconium and apolyimide.
 15. The semiconductor structure of claim 14, wherein theprotective layer consists essentially of an insulator nitride compound,and the first and second insulator structures consists essentially ofthe polyimide.
 16. The semiconductor structure of claim 14, wherein theat least one contact includes a layer of titanium nitride and a layer oftungsten.
 17. The semiconductor structure of claim 14, wherein theprotective layer comprises trisilicon tetranitride.
 18. Thesemiconductor structure of claim 14, wherein the protective layeroverlies at least one active device and the contact plug is electricallycoupled to the at least one device.
 19. The semiconductor structure ofclaim 14, wherein the protective layer has a thickness of about 100nanometers.
 20. The semiconductor structure of claim 14, wherein thecopper structure does not include a copper alloy.
 21. A semiconductorstructure comprising: a protective layer; a first insulator structureoverlying and contacting the protective layer; a copper structurecontacting the first insulator structure and overlying a portion of theprotective layer; at least one contact extending through the protectivelayer and electrically coupled to the copper structure; a secondinsulator structure overlying the portion of the protective layer andcomprising an insulator oxide compound; and an inhibiting layer betweenthe second insulator structure and the copper structure, wherein theinhibiting layer comprises a compound that comprises aluminum and theinsulator oxide compound.
 22. The semiconductor structure of claim 21,wherein the protective layer consists essentially of an insulatornitride compound, and the first and second insulator structures consistsessentially of the insulator oxide compound.
 23. The semiconductorstructure of claim 21, wherein the at least one contact includes a layerof titanium nitride and a layer of tungsten.
 24. The semiconductorstructure of claim 21, wherein the protective layer comprises a siliconnitride.
 25. The semiconductor structure of claim 21, wherein theprotective layer overlies at least one active device and the contactplug is electrically coupled to the at least one device.
 26. Thesemiconductor structure of claim 21, wherein the copper structure doesnot include a copper alloy.
 27. A semiconductor structure comprising: aprotective layer overlying at least one active device; a first insulatorstructure overlying and contacting the protective layer; a copperstructure contacting the first insulator structure and overlying aportion of the protective layer; at least one contact extending throughthe protective layer and electrically coupled to the at least one activedevice and the copper structure; a second insulator structure overlyingthe portion of the protective layer and comprising a first substanceselected from a group consisting of a polymer, a foamed polymer, afluorinated polymer, a fluorinated-foamed polymer, an aerogel, and aninsulator oxide compound; and an inhibiting layer between the secondinsulator structure and the copper structure, wherein the inhibitinglayer comprises a compound including one or more elements of the firstsubstance and one or more elements of a second substance selected from agroup consisting of chromium, molybdenum, zirconium, hafnium, vanadium,niobium, aluminum, magnesium, and boron.
 28. The semiconductor structureof claim 21, wherein the protective layer consists essentially of aninsulator nitride compound, and the first and second insulatorstructures consists essentially of the first substance.
 29. Thesemiconductor structure of claim 21, wherein the at least one contactplug includes a layer of titanium nitride and a layer of tungsten. 30.The semiconductor structure of claim 21, wherein the copper structuredoes not include a copper alloy.
 31. A semiconductor structurecomprising: a protective layer overlying at least first and secondactive devices; a first insulator structure overlying and contacting theprotective layer; first and second conductive members extending throughthe protective layer and respectively electrically coupled to the firstand second active devices; a copper structure contacting the firstinsulator structure, overlying at least a portion of the protectivelayer between the first and second contacts, and electrically coupled tothe first and second contacts; a second insulator structure overlyingthe portion of the protective layer between the first and secondconductive members and comprising a first substance selected from agroup consisting of a polymer, a foamed polymer, a fluorinated polymer,a fluorinated-foamed polymer, an aerogel, and an insulator oxidecompound; and an inhibiting layer between the second insulator structureand the copper structure, wherein the inhibiting layer comprises acompound including one or more elements of the first substance and oneor more elements of a second substance selected from a group consistingof chromium, molybdenum, zirconium, haihium, vanadium, niobium,aluminum, magnesium, and boron.
 32. The semiconductor structure of claim31, wherein the protective layer consists essentially of an insulatornitride compound, and the first and second insulator structures consistsessentially of the first substance.
 33. The semiconductor structure ofclaim 31, wherein each of the conductive members includes a layer oftitanium nitride and a layer of tungsten.
 34. The semiconductorstructure of claim 31, wherein the copper structure does not include acopper alloy.
 35. A semiconductor structure comprising: a protectivelayer overlying at least first and second active devices; a firstinsulator structure overlying and contacting the protective layer; firstand second conductive members extending through the protective layer andrespectively electrically coupled to the first and second activedevices; a structure consisting essentially of copper, contacting thefirst insulator structure, overlying at least a portion of theprotective layer between the first and second conductive members, andelectrically coupled to the first and second contacts; a secondinsulator structure overlying the portion of the protective layerbetween the first and second conductive members and comprising a firstsubstance selected from a group consisting of a polymer, a foamedpolymer, a fluorinated polymer, a fluorinated-foamed polymer, anaerogel, and an insulator oxide compound; and means for inhibiting atommigration between the second insulator structure and the structure. 36.The semiconductor structure of claim 35, wherein the protective layerconsists essentially of an insulator nitride compound, and the first andsecond insulator structures consists essentially of the first substance.37. The semiconductor structure of claim 35, wherein the means forinhibiting layer comprises a compound including one or more elements ofthe first substance and one or more elements of a second substanceselected from a group consisting of chromium, molybdenum, zirconium,hafnium, vanadium, niobium, aluminum, magnesium, and boron.